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| Renesas to Offer SiGe MMIC Dual-Band Wireless-LAN Power Amplifier Renesas Technology America has announced the high-performance HA31010, a 2.4GHz/5GHz dual-band SiGe MMIC (monolithic microwave integrated circuit) power amplifier. The device uses less current and circuit board space, so it enables smaller, lower-power dual-band/triple-mode (IEEE-802.11a/b/g) and MIMO (Multiple-Input/Multiple-Output - 802.11n) wireless-LAN terminals. By incorporating two power amplifiers on a single chip — one for the 2.4GHz band and another for the 5GHz band — the HA31010 MMIC achieves a 4 mm x 4 mm mounting area, approximately 40 percent smaller than separate 2.4GHz and 5GHz Renesas SiGe MMICs. The device delivers high gain at the industry's lowest current dissipation level for a SiGe MMIC. Specifically, it achieves a 28dB power gain in the 2.4GHz band while consuming only 130mA, and a 24dB power gain in the 5GHz band while consuming just 160mA. An on-chip MOSFET-based switching circuit provides on/off control of the two amplifier circuits, simplifying band switching and transmit/receive implementation by eliminating the need for an external switching device. The HA31010 MMIC also incorporates an output power detector circuit. This feature simplifies the design of wireless LAN terminals that actively implement low power consumption. In such designs, the power detector serves as a sensor for the automatic output-power control function that maintains the minimum output power necessary for performing communication. Renesas uses an ultra-fine SiGe-CMOS process to manufacture the HA31010 chip, which allows a high level of integration. The transistor pattern and circuit-block layout are optimized to reduce parasitic capacitances and inductances that would otherwise degrade high-frequency characteristics. The chip is mounted in a small surface-mount, 24-pin WQFN0404 (Renesas package code) package that is totally lead-free. The package employs silver paste material for optimal die bonding reliability and conductivity, and Sn-Bi (stannum-bismuth) for package electrode plating. write your comments about the article :: © 2006 Networking News :: home page |