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| Nantero Fabricates 22nm NRAM Memory Switch Nantero, Inc. announces that it has fabricated and successfully tested a 22-nanometer NRAM memory switch. This switch demonstrates that NRAM is scalable to numerous process technology nodes over several decades. NRAM is a rewritable memory device that holds its data content without power, making it a potential universal memory and an ideal solution for numerous applications, including portable consumer products. In addition to the advanced R&D work that resulted in the fabrication of the 22nm NRAM switch, Nantero is also engaged in the development of NRAM memory chips at technology nodes in use today. This development is being conducted in production CMOS fabs, and Nantero has already developed a production-compatible process for making NRAM, using only existing tools and processes. Nantero's NRAM switches have been tested by writing and reading data using three nanosecond cycle times, giving it the potential to match the fastest memories in production today. NRAM switches are fabricated using Nantero's proprietary carbon nanotube fabric, covered by US patent 6, 706, 402. Nantero now has over 80 patent applications pending covering multiple aspects of carbon nanotube use in electronics, of which over a dozen have been granted. The semiconductor industry is actively evaluating emerging memory technologies in their search for a new scalable memory technology because the memory devices in use today are not expected to scale beyond very few additional process technology nodes. write your comments about the article :: © 2006 Networking News :: home page |