Samsung Unwraps Samsung's PRAM Flash Memory

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Samsung is pronouncing major component technology advancements including the 40-nanometer 32-Gigabit NAND flash, the first prototype of the Phase-change Random Access Memory, or simply PRAM, and a new System-on-Chip controller for the soon-to-be-released Hybrid Hard Disk Drive. Samsung thinks flash technology to continue to enable a new world of digital performance where consumers can take whatever amounts of entertainment and informational data they want to wherever they want to go.

As the world moves toward greater globalization and more universal dissemination of information, Dr. Hwang said providing the convenience of added portability through a broad diversity of flash-driven mobile applications will bring about a new utopia of storage-based freedom, which Samsung is referring to as Flashtopia. Samsung has also showcased the first NAND flash memory incorporating an innovative 'Charge Trap Flash' technology. Following the 'New Memory Growth Theory', which Samsung's Dr. Hwang first predicted in a keynote at ISSCC in 2002, the Samsung's 40nm CTF-based NAND flash memory represents a seventh generation of the Theory, which has memory density doubling every twelve months. Samsung expects CTF-based NAND eventually to be refined down to 20nm at the 256 Gigabit-level. NAND flash has been the data storage device in virtually all digital cameras, USB drives and MP3 players, as well as most multimedia handsets and smart phones. This year, NAND flash also is entering the PC computing environment. Samsung launched the first solid-state-disk notebooks, called SENS Q3-SSD and SENS Q1-SSD in June. Their higher performance, lighter weight and enhanced storage reliability are key factors attracting mobile developers to NAND flash. Samsung also says they develop a System-on-Chip controller for the upcoming Hybrid drive. The new SoC represents the diversity of advanced core technologies that Samsung provides.

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