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| Elpida Memory's 512 Megabit XDR DRAM  Elpida Memory, Inc. has announced the availability of 512 Megabit XDR DRAM devices in sample quantities. The new devices operate at 4.0 GHz data rate, providing a data transfer rate of 8.0 Gigabytes per second (GB/s) within a single device for digital consumer electronics applications such as high definition televisions (HDTV), gaming consoles and home entertainment server systems that require high bandwidth to support 3-D graphics, superb digital imaging and advanced multimedia. XDR DRAM is based on the XDR memory interface architecture developed by Rambus, Inc.Elpida's 512 Megabit XDR DRAM (Part number: EDX5116ACSE) devices are organized as 4M words x 16-bits x 8 banks and with 4.0 GHz operation and 8.0 Gigabytes per second (GB/s) data transfer rate, more than 4 times the peak bandwidth of industry-standard DDR2 memory devices. They are manufactured using Elpida's 90 nm process technology and are available in 104-ball FBGA packages. To support both high speed and robust data transfer, the devices utilize advanced Rambus-specific features such as Differential Rambus Signal Level (DRSL) interface, which minimizes the signal swing and noise, and Octal Data Rate (ODR) which transfers 8 bits per clock cycle to achieve 4.0 GHz operation even with the commonly used 400 MHz clock. The 512 Megabit XDR devices also feature programmable on-chip termination, adaptive impedance matching, dynamic request scheduling and zero overhead refresh. write your comments about the article :: © 2006 Computing News :: home page |