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| Samsung Begins Volume Production of First 80-nanometer DDR2 Samsung Electronics Co., Ltd. has announced that it is the first manufacturer in the industry to begin mass producing DDR2 DRAM - 512 Megabit (Mb) - on an 80 nanometer scale. With 80-nm process technology, Samsung is able to increase its production efficiency by 50 percent over the previous 90-nm process. The production economies of scale afforded by moving to 80-nm process technology will better enable the company to meet increasing demand for DDR2. Samsung was able to smoothly transition from 90-nm to 80-nm process technology because it utilized many of the basic features of 90-nm geometries, and as a result required minimal upgrades to its fabrication lines. The move to 80-nm circuitry was sped up by the use of a recess channel array transistor (RCAT). This three-dimensional transistor layout greatly enhances the refresh rate, which is a critical element in data storage. Samsung's RCAT also reduces cell area coverage, which allows for increased process scaling by freeing up space for chip-per-wafer growth. write your comments about the article :: © 2006 Computing News :: home page |