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| Toshiba's 16-Gigabit Multi-Level Cell NAND Flash Component Toshiba America Electronic Components, Inc. has announced the availability of a 16-gigabit multi-level cell (MLC) NAND flash memory component developed by Toshiba Corp.. The new 16Gb NAND Flash part, designated TH58NVG4D4CTG, achieves 2 gigabytes of storage in a single thin, small-outline package (TSOP) by stacking two 70nm Toshiba 8Gb MLC NAND chips. The new 16Gb memory part is based on the Toshiba TC58NVG3D4CTG 8Gb MLC NAND, which maximizes performance by using fast writing circuit techniques to reduce data write times and supporting a fast write speed of 6-megabytes per second. The 8Gb NAND chips, co-developed by Toshiba and SanDisk Corp, are now in full production on 70nm production lines in an advanced wafer fabrication facility at Toshiba Yokkaichi Works run by Flash Partners, Inc., a joint venture of Toshiba and SanDisk. Part Number: TH58NVG4D4CTG Configuration: 2028M x 8 bits (16Gb) Power Supply: VCC = 2.7V to 3.6V Page Size: 2112 bytes Max. Programming Speed: 6MB/Second Package: 48-pin TSOP Type 1 Measures 12 x 20 x 1.2 millimeters write your comments about the article :: © 2006 Computing News :: home page |