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Toshiba and SanDisk to Expand NAND Flash Memory Production

Toshiba and SanDisk have signed a non-binding memorandum of understanding to form a new production joint venture and construct a new 300 millimeter wafer fab in Japan. The two companies will now select the plant site, targeting a production start-up date in 2010. This latest announcement underscores the commitment of Toshiba and SanDisk to the rapidly expanding market for NAND flash memory, which has become the storage technology of choice for a growing number of consumer and computing devices, including memory cards.

Fifty percent of the new fab's production capacity will be allocated to the new joint venture. Within the joint venture the parties will equally share wafer output and funding for the equipment. The remaining 50% of the Fab's production capacity will be managed by Toshiba and half of the output will be provided to SanDisk on a committed foundry basis. The agreement provides SanDisk an option to convert its committed foundry capacity into the joint venture or to convert to a non-committed foundry arrangement. Construction of the new facility is expected to start in calendar year 2009.

Toshiba and SanDisk expect to sign a definitive agreement later in 2008.



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