Tokyo Electron Releases Trias LT Ti/TiN

Tokyo Electron has announced the company's latest 300mm metal CVD (chemical vapor deposition) system Trias LT Ti/TiN. The new system enables deposition of Ti (Titanium) and TiN (Titanium Nitride) films in low temperature process regimes.

Based on the industry-proven Trias platform, the Trias LT Ti/TiN meets the increasing demands for low temperature processing required in the manufacture of nickel silicide contacts. The system incorporates an enhanced shower head design, which allows wafer temperature control over a wide range of deposition temperatures. By applying TEL's novel processing technology and improved shower head design to contact processing, the Trias LT achieves improvements in barrier metal step coverage while enabling low contact resistance and reduced junction leakage. In addition, the Trias LT produces excellent film uniformity, improved repeatability and enhanced particle performance.

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